Product Summary

The W25NM60N is an N-channel FDmesh II Power MOSFET. The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. The W25NM60N includes Switching applications.

Parametrics

W25NM60N absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 600 V; (2)Gate- source voltage, VGS: ±25 V; (3)Drain current (continuous) at TC = 25℃, ID: 21A; (4)Drain current (continuous) at TC = 100℃, ID: 13A; (5)Drain current (pulsed), IDM: 84A; (6)Total dissipation at TC = 25℃, PTOT: 40 W; (7)Peak diode recovery voltage slope, dv/dt: 40 V/ns; (8)Insulation withstand voltage (RMS) from all three leads to external heat sink (t= 1 s; TC= 25℃), Viso: 2500 V; (9)Storage temperature, Tstg: -55 to 150℃; (10)Max. operating junction temperature, TJ: 150℃.

Features

W25NM60N features: (1)The worldwide best RDS(on) area amongst the fast recovery diode devices; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance; (5)Extremely high dv/dt and avalanche capabilities.

Diagrams

W25NM60N block diagram