Product Summary

The VQ1000J is an N-Channel (D-S) MOSFET. The applications of the VQ1000J include Low On-Resistance: 2.5Ω, Low Threshold: 2.1 V, Low Input Capacitance: 22 pF, Fast Switching Speed: 7 ns, Low Input and Output Leakage.

Parametrics

VQ1000J absolute maximum ratings: (1)Drain-Source Voltage, VDS: 60V; (2)Gate-Source Voltage—Non-Repetitive, VGSM: ±25 V; (3)Gate-Source Voltage—Continuous, VGS: ±20V; (4)Continuous Drain Current TA= 25℃, ID: 0.225A; (TJ = 150℃) TA= 100℃, ID: 0.14A; (5)Pulsed Drain Current, IDM: 1A; (6)Power Dissipation, TA= 25℃, PD: 1.3W; TA= 100℃, PD: 0.52W; (7)Thermal Resistance, Junction-to-Ambient, RthJA: 96℃/W; (8)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.

Features

VQ1000J features: (1)Low On-Resistance: 2.5Ω; (2)Low Threshold: 2.1 V; (3)Low Input Capacitance: 22 pF; (4)Fast Switching Speed: 7 ns; (5)Low Input and Output Leakage.

Diagrams

VQ1000J block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
VQ1000J
VQ1000J
Vishay/Siliconix
MOSFET QD 60V 0.225A
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
VQ1000J
VQ1000J
Vishay/Siliconix
MOSFET QD 60V 0.225A
Data Sheet
Negotiable 
VQ1000P
VQ1000P
Vishay/Siliconix
MOSFET QD 60V 0.225A
Data Sheet
0-5: $529.31
5-10: $375.44
VQ1001J
VQ1001J
Vishay/Siliconix
MOSFET QD 30V 0.83A
Data Sheet
Negotiable 
VQ1001P
VQ1001P
Vishay/Siliconix
MOSFET QD 30V 0.53A
Data Sheet
0-1: $40.32
1-10: $38.39
10-25: $36.47
25-50: $34.55
VQ1004J
VQ1004J
Vishay/Siliconix
MOSFET QD 60V 0.46A
Data Sheet
Negotiable 
VQ1000P-E3
VQ1000P-E3
Vishay/Siliconix
MOSFET N-CH 60V 0.225A
Data Sheet
0-13: $197.99
13-25: $188.09