Product Summary

The IRFR9024NPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR9024NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFR9024NPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFR9024NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ -10V: -11A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ -10V: -8 A; (3)Pulsed Drain Current, IDM: -44A; (4)PD @TC = 25℃ Power Dissipation 38 W; (5)Linear Derating Factor: 0.30 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 62 mJ; (8)Avalanche Current, IAR: -6.6 A; (9)Repetitive Avalanche Energy, EAR: 3.8 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: -10 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 150℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case℃).

Features

IRFR9024NPBF features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount (IRFR9024N); (4)Straight Lead (IRFU9024N); (5)Advanced Process Technology; (6)Fast Switching; (7)Fully Avalanche Rated; (8)Lead-Free.

Diagrams

IRFR9024NPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFR9024NPBF
IRFR9024NPBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.76
1-25: $0.44
25-100: $0.27
100-250: $0.25
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