Product Summary

The C1971 is a RF power transistor with npn epitaxial planar type in VHF band application. It is suitable for 4 to 5 watts output power amplifiers in VHF band applications.

Parametrics

C1971 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 35 V; (2)VCEO, Collector-Emitter Voltage: 17 V; (3)VEBO, Emitter-Base Voltage: 4 V; (4)IC, Collector Current-Continuous: 2 A; (5)PC, Collector Power Dissipation @TC=25℃: 12.5 W; (6)Collector Power Dissipation @Ta=25℃: 1.5 w; (7)TJ, Junction Temperature: 150 ℃; (8)Tstg, Storage Temperature Range: -55 to 150 ℃; (9)Rth-a, thermal resistance, junction to amboent: 83 ℃/W; (10)Rth-c, thermal resistance, junction to case: 10 ℃/W.

Features

C1971 features: (1)High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V; (2)emitter ballasted construction, gold metallization for high reliability and good performances; (3)TO-220 package similar is combinient for mouting; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2 v, Po=6w, f=175MHz.

Diagrams

C1971 block diagram